inchange semiconductor product specification silicon npn power transistors BU126 description ? ? with to-3 package ? high breakdown voltage applications ? for voltage regulator ,inverter,switching mode power supply applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 750 v v ceo collector-emitter voltage open base 300 v i c collector current 3.0 a i cm collector current-peak 6.0 a i b base current 2.0 a p t total power dissipation t c =25 ?? 40 w t j junction temperature 125 ?? t stg storage temperature -65~125 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 2.5 k/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BU126 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0; 300 v v (br)ebo emitter-base breakdown votage i e =1ma; i c =0 6 v v cesat-1 collector-emitter saturation voltage i c =2.5 a;i b =0.25a 10 v v cesat-2 collector-emitter saturation voltage i c =4 a;i b =1a 5.0 v v besat base-emitter saturation voltage i c =4a;i b =1a 1.5 v i ces collector cut-off current v ce =750v;v be =0 ta=125 ?? 0.5 2 ma i ebo emitter cut-off current v eb =5v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce = 5v 15 c ob output capacitance i e =0; v cb =10v;f=0.5mhz 75 pf f t transition frequency i c =0.2 a ; v ce =10v 10 mhz t f fall time i c =2.5a ;i b =0.25a 0.2 | s
inchange semiconductor product specification 3 silicon npn power transistors BU126 package outline fig.2 outline dimensions
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